Skip to main content
SpringerLink
Log in

Formation of built-in potential in Si (100) crystals under microwave plasma treatment

  • Fabrication, Treatment, and Testing of Materials and Structures
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A study of the fundamental aspects of the influence exerted on the electronic properties of a surface of Si (100) single crystals with a natural oxide coating by low-energy microwave plasma treatment in various plasma-forming media is reported. Model mechanisms of the process and factors providing stable modification of the electronic properties of the surface of silicon crystals via the formation of built-in surface potentials determined by the chemical activity of working gases used in plasma microtreatment under weak-adsorption conditions are considered. It is shown that, in principle, the electronic properties of the surface of semiconductor crystals can be actively formed to extend their electrical and functional properties.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Surface Science: An Introduction (Springer, New York, 2003; Nauka, Moscow, 2006).

    Book  Google Scholar 

  2. V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1977) [in Russian].

    Google Scholar 

  3. B. S. Danilin and V. Yu. Kireev, Application of Low-Temperature Plasma For Etching and Cleaning of Materials (Energoatomizdat, Moscow, 1987) [in Russian].

    Google Scholar 

  4. G. G. Dvoryankina, A. A. Telegin, V. F. Dvoryankin, A.G. Petrov, L. G. Kyarginskaya, N. M. Ushakov, S. F. Averin, V. E. Vyduts, V. I. Petrosyan, and B. B. Elenkrig, Mikroelektronika 18, 412 (1989).

    Google Scholar 

  5. N. M. Ushakov, S. A. Terentiev, and R. K. Yafarov, Tech. Phys. Lett. 28, 625 (2002).

    Article  ADS  Google Scholar 

  6. S. Sze, VLSI Technology (McGraw-Hill, New York, 1988; Mir, Moscow, 1985).

    Google Scholar 

  7. V. Ya. Shanygin and R. K. Yafarov, Tech. Phys. 54, 1795 (2009).

    Article  Google Scholar 

  8. R. K. Yafarov, Nanotechnology Microwave Vacuum-Plasma Equipments (Fizmatlit, Moscow, 2009) [in Russian].

    Google Scholar 

  9. D. V. Budko and R. K. Yafarov, in Proceedings of the 6th All-Russia Conference of Young Scientists on Nanoelectronics, Nanophotonics and Nonlinear Physics, Saratov, Sept. 13–15, 2011, p. 13.

Download references

Author information

Authors and Affiliations

  1. Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Saratov, Russia

    R. K. Yafarov

Authors
  1. R. K. Yafarov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. K. Yafarov.

Additional information

Original Russian Text © R.K. Yafarov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 529–534.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yafarov, R.K. Formation of built-in potential in Si (100) crystals under microwave plasma treatment. Semiconductors 48, 511–516 (2014). https://doi.org/10.1134/S1063782614040277

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782614040277

Keywords

Search

Navigation