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Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

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Abstract

The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si+ ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed.

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Authors and Affiliations

  1. Skobel’tsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991, Russia

    A. A. Shemukhin, Y. V. Balakshin & V. S. Chernysh

  2. Faculty of Physics, Moscow State University, Moscow, 119991, Russia

    Y. V. Balakshin & V. S. Chernysh

  3. Research Institute of Materials Science and Technology, Yuzhnaya Promzona, Zelenograd, 124460, Russia

    S. A. Golubkov, N. N. Egorov & A. I. Sidorov

Authors
  1. A. A. Shemukhin
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  2. Y. V. Balakshin
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  3. V. S. Chernysh
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  4. S. A. Golubkov
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  5. N. N. Egorov
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  6. A. I. Sidorov
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Corresponding author

Correspondence to A. A. Shemukhin.

Additional information

Original Russian Text © A.A. Shemukhin, Y.V. Balakshin, V.S. Chernysh, S.A. Golubkov, N.N. Egorov, A.I. Sidorov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 535–538.

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Shemukhin, A.A., Balakshin, Y.V., Chernysh, V.S. et al. Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation. Semiconductors 48, 517–520 (2014). https://doi.org/10.1134/S1063782614040265

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  • DOI: https://doi.org/10.1134/S1063782614040265

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