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p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

  • Surfaces, Interfaces, and Thin Films
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Abstract

A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) p-GaSb(Ox)/n-GaSb are fabricated for the first time. The developed technological process is based on the surface thermal interaction of a GaSb crystal with components of the normal Earth atmosphere. Based on original physical-technological studies of interaction in the GaSb/(air medium) system, it is found that p-GaSb(Ox) native-oxide films obtained in such a way exhibit high adhesion to the surface of the initial gallium antimonide n-GaSb. The steady-state current-voltage characteristics and spectral dependences of the relative photoconversion quantum efficiency of the obtained p-GaSb(Ox)/n-GaSb heterojunctions are first measured. On this basis, the systematic features of charge transport and photosensitivity are discussed. A new possible application of the non-vacuum thermal oxidation of GaSb films in the development of optical radiation photodetectors on substrates of homogeneous gallium antimonide n-GaSb crystals is first detected and implemented.

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Authors and Affiliations

  1. Saint Petersburg State Polytechnical University, ul. Polytekhnicheskaya 29, St. Petersburg, 195257, Russia

    V. Yu. Rud’

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’, E. I. Terukov & T. N. Ushakova

  3. National University “Lvivs’ka Politekhnika”, ul. St. Bandery 12, Lviv, 790000, Ukraine

    G. A. Il’chuk

Authors
  1. V. Yu. Rud’
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  2. Yu. V. Rud’
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  3. E. I. Terukov
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  4. T. N. Ushakova
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  5. G. A. Il’chuk
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Corresponding author

Correspondence to Yu. V. Rud’.

Additional information

Original Russian Text © V.Yu. Rud’, Yu.V. Rud’, E.I. Terukov, T.N. Ushakova, G.A. Il’chuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 471–474.

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Rud’, V.Y., Rud’, Y.V., Terukov, E.I. et al. p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties. Semiconductors 48, 455–458 (2014). https://doi.org/10.1134/S106378261404023X

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  • DOI: https://doi.org/10.1134/S106378261404023X

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