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Morphological characteristics of grain boundaries in multicrystalline silicon

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The structure of multicrystalline silicon and the distribution of the nonequlibrium charge-carrier lifetime over the surface and in the bulk of samples are investigated. Regular dependences of the electrical characteristics on the structure of grains and grain boundaries are established. Grain boundaries in multisilicon grown by the Bridgman-Stockbarger technique from a melt of metallurgical grade silicon are investigated. Metallographic and microscopic descriptions of grain boundaries can be used in fitting the crystallization conditions for growing multisilicon with the perfect structure for solar-power engineering.

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Authors and Affiliations

  1. Vinogradov Institute of Geochemistry, Russian Academy of Sciences, Siberian Branch, Irkutsk, 664033, Russia

    S. M. Pescherova, A. I. Nepomnyaschih, L. A. Pavlova, I. A. Eliseev & R. V. Presnyakov

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  1. S. M. Pescherova
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  2. A. I. Nepomnyaschih
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  3. L. A. Pavlova
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  4. I. A. Eliseev
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  5. R. V. Presnyakov
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Correspondence to S. M. Pescherova.

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Original Russian Text © S.M. Pescherova, A.I. Nepomnyaschih, L.A. Pavlova, I.A. Eliseev, R.V. Presnyakov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 492–497.

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Pescherova, S.M., Nepomnyaschih, A.I., Pavlova, L.A. et al. Morphological characteristics of grain boundaries in multicrystalline silicon. Semiconductors 48, 476–480 (2014). https://doi.org/10.1134/S1063782614040228

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  • DOI: https://doi.org/10.1134/S1063782614040228

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