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Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

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Abstract

The effect of the low-temperature annealing of n- and p-type InSe single crystals on the photoelectric characteristics of n-InSe/p-InSe heterojunctions is investigated. It is found that the most pronounced enhancement of these characteristics takes place for annealing temperatures of 150–200°C. Improvement in the quality of single-crystal samples upon annealing is confirmed by the observation of multiplet nuclear quadrupole resonance spectra, which reflect ordering in the system of polytypes of layered InSe crystals. For annealed materials, n-InSe/p-InSe structures exhibit an increase in the intensity of the exciton peak and an increase in the open-circuit voltage from 0.29 to 0.56 V and short-circuit current from 350 to 840 μA/cm2.

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Authors and Affiliations

  1. Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine

    V. A. Khandozhko

  2. Frantsevich Institute of Materials Science Problems, Chernivtsi Branch, National Academy of Sciences of Ukraine, Chernivtsi, 58001, Ukraine

    Z. R. Kudrynskyi & Z. D. Kovalyuk

Authors
  1. V. A. Khandozhko
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  2. Z. R. Kudrynskyi
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  3. Z. D. Kovalyuk
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Correspondence to Z. R. Kudrynskyi.

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Original Russian Text © V.A. Khandozhko, Z.R. Kudrynskyi, Z.D. Kovalyuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 564–569.

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Khandozhko, V.A., Kudrynskyi, Z.R. & Kovalyuk, Z.D. Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions. Semiconductors 48, 545–550 (2014). https://doi.org/10.1134/S1063782614040149

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  • DOI: https://doi.org/10.1134/S1063782614040149

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