Abstract
The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered. The current-voltage characteristics of long-channel field-effect transistors with an arbitrary doping profile and carrier-mobility gradient are theoretically analyzed taking into account carrier velocity saturation.
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Original Russian Text © A.V. Karimov, D.M. Yodgorova, O.A. Abdulkhaev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 498–503.
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Karimov, A.V., Yodgorova, D.M. & Abdulkhaev, O.A. Long-channel field-effect transistor with short-channel transistor properties. Semiconductors 48, 481–486 (2014). https://doi.org/10.1134/S1063782614040137
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DOI: https://doi.org/10.1134/S1063782614040137