Abstract
In this paper, we present the results of the white light-emitting diodes (LEDs) construction based on GaPAsN semiconductor alloys on a GaP substrate. Heterostructure electroluminescence with a continuous emission spectrum in the range from 350 nm to 1050 nm is observed. The output of light through the side walls and the face side of the sample enabled us to achieve white light emission by means of ultra-wide electroluminescence spectrum covering all visible spectrum and part of the near IR spectral range. While extracting emission through substrate, the short-wavelength part of the visible spectra is absorbed at GaP layer.
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H. Wu, X. Zhang, C. Guo, J. Xu, M. Wu, and Q. Su, IEEE Photon. Tech. Lett. 17, 1160 (2005).
K. Y. Ko, D. H. Lee, K. H. Jang, S. Y. Choi, and Y. T. Kim, USA Patent No. 20130020931 (2013).
E. Jang, J. Shinae, J. Hyosook, L. Jungeun, K. Byungki, and K. Younghwan, Adv. Mater. 22, 3076 (2010).
S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story (Springer, 2000).
O. N. Ermakov, M. G. Kaplunov, O. N. Efimov, I. K. Yakushchenko, M. Yu. Belov, and M. F. Budyka, Microelectron. Eng. 68, 208 (2003).
F. Caruso, M. Mosca, R. Macaluso, E. Feltin, and C. Cali, Electron. Lett. 48, 1417 (2012).
C.-Y. Chen, C. N. Huang, F. C. Hwang, M. H. Hong, and E. G. Lean, USA Patent No. 6163038 (2000).
S. J. Chua, P. Li, M. Hao, and J. Zhang, USA Patent No. 6645885 (2003).
S.-D. Chua, P. Chen, Ch. Chen, and E. Takasuka, RF Patent (2006). http://www.freepatent.ru/images/patents/70/2392695/patent-2392695.pdf
T. Kim, J. Kim, M. Yang, and Y. Ko, in CLEO: Applications and Technology (Opt. Soc. of America, 2012).
T. Kim, J. Kim, M. Yang, S. Lee, Y. Park, Y. Ko, and Y. Cho, in Proceedings of the Conference on Lasers and Electro-Optics (CLEO), 2011 (IEEE, 2011), p. 1–2.
T. Kim, J. Kim, M. Yang, Y. Park, U. I. Chung, Y. Ko, and Y. Cho, in SPIE OPTO (Int. Soc. Opt. Photon., 2013), pp. 86410E–86410E.
H. Yonezu, Semicond. Sci. Technol. 17, 762 (2002).
W. Shan, W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager, E. E. Haller, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 3251 (2000).
I. A. Buyanova, G. Pozina, J. P. Bergman, W. M. Chen, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 81, 52 (2002).
M. Kaneko, T. Hashizume, V. A. Odnoblyudov, and C. W. Tu, J. Appl. Phys. 101, 103707 (2007).
A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, and C. Tu, Semiconductors 36, 981 (2002).
H. C. Alt, A. Y. Egorov, H. Riechert, J. D. Meyer, and B. Wiedemann, Phys. B: Condens. Matter 308, 877 (2001).
P. R. C. Kent, and A. Zunger, Phys. Rev. B 64, 115208 (2001).
W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).
C. Skierbiszewski, P. Perlin, P. Wisniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, J. F. Geisz, and J. M. Olson, Appl. Phys. Lett. 76, 2409 (2000).
W. Shan, W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager, E. E. Haller, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 3251 (2000).
A. Yu. Egorov, E. V. Nikitina, and A. V. Babichev, RF Patent No. 2013128322 (2013).
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Original Russian Text © A.V. Babichev, A.A. Lazarenko, E.V. Nikitina, E.V. Pirogov, M.S. Sobolev, A.Yu. Egorov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 518–522.
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Babichev, A.V., Lazarenko, A.A., Nikitina, E.V. et al. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys. Semiconductors 48, 501–504 (2014). https://doi.org/10.1134/S106378261404006X
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DOI: https://doi.org/10.1134/S106378261404006X