Skip to main content
SpringerLink
Log in

Model of the behavior of MOS structures under ionizing irradiation

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A quantitative model describing the behavior of MOS structures under ionizing irradiation is developed. The model is based on the capture of holes by hydrogen-containing traps. Some traps are charged and thus form a positive space charge in the insulator. The other traps decay to release positive hydrogen ions. These ions migrate in the insulator electric field to the insulator-semiconductor interface, where they depassivate surface states. The charging of surface states both under irradiation and during measurement of the threshold voltage is taken into account.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. F. P. Korshunov, Yu. V. Bogatyrev, and V. A. Vavilov, Radiation Effects in ICs (Nauka Tekhnika, Minsk, 1986) [in Russian].

    Google Scholar 

  2. V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Circuits (Energoatomizdat, Moscow, 1988) [in Russian].

    Google Scholar 

  3. T. R. Oldham, IEEE Trans. Nucl. Sci. 50, 483 (2003).

    Article  ADS  Google Scholar 

  4. H. L. Hughes and J. M. Benedetto, IEEE Trans. Nucl. Sci. 50, 500 (2003).

    Article  ADS  Google Scholar 

  5. V. A. Gurtov, Solid State Electronics (Tekhnosfera, Moscow, 2008), p. 67 [in Russian].

    Google Scholar 

  6. P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. 55, 3495 (1984).

    Article  Google Scholar 

  7. B. B. Triplett, T. Takahashi, and T. Sugano, Appl. Phys. Lett. 50, 1163 (1987).

    Article  Google Scholar 

  8. V. V. Afanas’ev and A. J. Stesmans, Phys.: Condens Matter. 12, 2285 (2000).

    ADS  Google Scholar 

  9. V. V. Afanas’ev, G. J. Andriaenssens, and A. J. Stesmans, Microelectron. Eng. 59, 85 (2001).

    Article  Google Scholar 

  10. A. Rivera, A. van Veen, J. M. M. de Nijs, and P. Balk, Solid State Electron. 46, 1775 (2002).

    Article  ADS  Google Scholar 

  11. Y. Nishi, Jpn. J. Appl. Phys. 10, 52 (1971).

    Article  ADS  Google Scholar 

  12. E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993).

    Article  ADS  Google Scholar 

  13. D. L. Griscom, Appl. Phys. 58, 2524 (1985).

    Article  Google Scholar 

  14. A. G. Revesz, Electrochem. Soc. 126, 122 (1979).

    Article  Google Scholar 

  15. B. J. Mrstik and R. W. Bendell, J. Appl. Phys. 59, 3012 (1991).

    Google Scholar 

  16. F. B. McLean, IEEE Trans. Nucl. Sci. 27, 1651 (1980).

    Article  ADS  Google Scholar 

  17. M. N. Levin, A. V. Tatarintsev, V. A. Makarenko, and V. R. Gitlin, Russ. Microelectron. 35, 329 (2006).

    Article  Google Scholar 

  18. M. N. Levin, A. V. Tatarintsev, E. V. Bondarenko, V. R. Gitlin, V. A. Makarenko, and A. E. Bormontov, Vestn. Voronezh. Univ., Ser. Fiz. Mat., No. 2, 30 (2008).

    Google Scholar 

  19. S. R. Hofstein, IEEE Trans. Electron. Dev. 11, 749 (1967).

    Article  Google Scholar 

  20. J. M. Benedetto and H. E. Boech, IEEE Trans. Nucl. Sci. 33, 1318 (1986).

    Article  ADS  Google Scholar 

  21. R. J. Krantz, L. W. Aulerman, and T. C. Sietlow, IEEE Trans. Nucl. Sci. 34, 1196 (1987).

    Article  ADS  Google Scholar 

  22. H. E. Boech, F. B. McLean, J. M. Benedetto, and J. M. McGarrity, IEEE Trans. Nucl. Sci. 33, 1191 (1986).

    Article  ADS  Google Scholar 

  23. N. S. Saks, R. B. Klein, and D. L. Griscom, IEEE Trans. Nucl. Sci. 35, 1234 (1988).

    Article  ADS  Google Scholar 

  24. A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, Electronics of SiO 2 Layers on Silicon (Leningr. Univ., Leningrad, 1988) [in Russian].

    Google Scholar 

  25. A. M. Emel’yanov, Phys. Solid State 52, 1131 (2010).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. St. Petersburg State Electrotechnical University “LETI”, St. Petersburg, 197376, Russia

    O. V. Aleksandrov

Authors
  1. O. V. Aleksandrov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to O. V. Aleksandrov.

Additional information

Original Russian Text © O.V. Aleksandrov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 523–528.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Aleksandrov, O.V. Model of the behavior of MOS structures under ionizing irradiation. Semiconductors 48, 505–510 (2014). https://doi.org/10.1134/S1063782614040046

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782614040046

Keywords

Search

Navigation