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Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO2 quantum dots

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Observation at the room temperature the spectra of the resonant inelastic light scattering by the spatially confined optical phonons as well as the excitonic luminescence caused by confinement effects in the ensemble of isolated quantum dots (QDs) nc-Si/SiO2 is reported. It is shown that the samples investigated are high purity and high crystalline perfection quality nc-Si/SiO2 QDs without amorphous phase α-Si and contaminants. Comparison between the experimental data obtained and phenomenological model of the strong space confinement of optical phonons revealed the need of the more accurate form of the weighted function for the confinement of optical phonons. It is shown that simultaneous detection of the inelastic light scattering by the confinement of phonons and the excitonic luminescence spectra by the confined electron-hole pairs in the nc-Si/SiO2 QDs allows selfconsistently to determine more accurate values of the diameter of the nc-Si/SiO2 QDs.

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Correspondence to F. B. Bairamov.

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Original Russian Text © F.B. Bairamov, V.V. Toporov, E.D. Poloskin, B.H. Bairamov, C. Röder, C. Sprung, K. Bohmhammel, J. Seidel, G. Irmer, A. Lashkul, E. Lähderanta, Y.W. Song, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 5, pp. 607–612.

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Bairamov, F.B., Toporov, V.V., Poloskin, E.D. et al. Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO2 quantum dots. Semiconductors 47, 623–627 (2013). https://doi.org/10.1134/S106378261302005X

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  • DOI: https://doi.org/10.1134/S106378261302005X

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