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Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

  • Electronic Properties of Semiconductors
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Abstract

The effect of alkali metals on carrier drift from grain boundaries to a polycrystalline silicon surface is experimentally studied. The results obtained show that an increase in the dopant concentration during the diffusion, desorption, and adsorption of alkali metals along grain boundaries leads to an increase in the potential barrier.

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Authors and Affiliations

  1. Babur Andizhan State University, ul. Universiteta 129, Andizhan, 710000, Uzbekistan

    L. O. Olimov

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  1. L. O. Olimov
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Correspondence to L. O. Olimov.

Additional information

Original Russian Text © L.O. Olimov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 7, pp. 922–924.

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Olimov, L.O. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface. Semiconductors 46, 898–900 (2012). https://doi.org/10.1134/S1063782612070159

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  • DOI: https://doi.org/10.1134/S1063782612070159

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