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Radiative recombination of hot carriers in narrow-gap semiconductors

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Abstract

The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and concentrations of hot carriers are determined. The radiative recombination rate of hot carriers and the radiation gain coefficient are calculated in terms of the Kane model. It is demonstrated that the radiative recombination of hot carriers will make a substantial contribution to the total radiative recombination rate at high carrier concentrations.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. V. Pavlov & G. G. Zegrya

Authors
  1. N. V. Pavlov
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  2. G. G. Zegrya
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Correspondence to G. G. Zegrya.

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Original Russian Text © N.V. Pavlov, G.G. Zegrya, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 1, pp. 32–37.

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Pavlov, N.V., Zegrya, G.G. Radiative recombination of hot carriers in narrow-gap semiconductors. Semiconductors 46, 29–34 (2012). https://doi.org/10.1134/S1063782612010162

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  • DOI: https://doi.org/10.1134/S1063782612010162

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