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Modelling and simulation of saturation region in double gate graphene nanoribbon transistors

  • Physics of Semiconductor Devices
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Abstract

Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain are studied.

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Engineering Campus, University Sains Malaysia, Penang, Malaysia

    Mahdiar H. Ghadiry & Asrulnizam Bin Abd Manaf

  2. Department of Computer Engineering, Ashtian Branch, Islamic Azad University, Ashtian, Iran

    Mahdieh Nadi

  3. Faculty of Electrical Engineering, University Technologi Malaysia, Skudai, Malaysia

    Meisam Rahmani & Mohamad Taghi Ahmadi

Authors
  1. Mahdiar H. Ghadiry
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  2. Mahdieh Nadi
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  3. Meisam Rahmani
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  4. Mohamad Taghi Ahmadi
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  5. Asrulnizam Bin Abd Manaf
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Correspondence to Mahdiar H. Ghadiry.

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Ghadiry, M.H., Nadi, M., Rahmani, M. et al. Modelling and simulation of saturation region in double gate graphene nanoribbon transistors. Semiconductors 46, 126–129 (2012). https://doi.org/10.1134/S1063782612010101

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  • DOI: https://doi.org/10.1134/S1063782612010101

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