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Transport and partial localization of electrons in strained short-period semiconductor superlattices

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The transport of polarized electrons in photocathodes based on highly strained semiconductor superlattices is studied experimentally and theoretically. In the experiments, the electron emission from the photocathode excited by a femtosecond laser pulse is studied by time-resolved measurements. The response time and the spin relaxation time are experimentally determined. The photoresponse of the photocathodes is calculated, and the results are correlated with the experimental data. A conclusion regarding the partial localization of photoelectrons in the superlattice is drawn.

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Correspondence to L. G. Gerchikov.

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Original Russian Text © L.G. Gerchikov, K. Aulenbacher, Yu.A. Mamaeva, E.J. Riehn, Yu.P. Yashin, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 1, pp. 70–76.

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Gerchikov, L.G., Aulenbacher, K., Mamaev, Y.A. et al. Transport and partial localization of electrons in strained short-period semiconductor superlattices. Semiconductors 46, 67–74 (2012). https://doi.org/10.1134/S1063782612010095

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  • DOI: https://doi.org/10.1134/S1063782612010095

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