Abstract
Based on ab initio calculations, the adsorption of oxygen and fluorine on reconstructed (2 × 2) and unreconstructed (1 × 1) InAs (111)A surfaces is studied. The most stable adsorption positions are determined. It is shown that adsorption of oxygen on both surfaces gives rise to electronic states in the band gap. The preferential positions for oxygen adsorption on an InAs (111)A (2 × 2) surface are those where oxygen is bonded both to indium atoms and to arsenic atoms in the surface layer and also the vacant site between three indium atoms (the “In-hollow position). Adsorption of fluorine brings about a pushing of the surface states out of the band gap; the position above indium atoms (the “In-top position) is preferential for adsorbed fluorine. Adsorption of fluorine on an InAs (111)A (1 × 1) surface leads to the elimination of the surface state formed by indium p orbitals and to an unpinning of the Fermi level.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. A. Kornyushkin, N. A. Valisheva, A. P. Kovchavtsev, and G. L. Kuryshev, Semiconductors 30, 487 (1996).
R. K. Ahrenkiel, L. L. Kazmenski, O. Jamjoum, P. E. Russel, P. J. Ireland, and R. S. Wagner, Thin Solid Films 95, 327 (1982).
G. Lucovsky and R. S. Bauer, J. Vac. Sci. Technol. 17, 946 (1980).
N. A. Valisheva, O. E. Tereshchenko, I. P. Prosvirin, T. A. Levtsova, E. E. Rodjakina, and A. P. Kovchavcev, Appl. Surf. Sci. 256, 5722 (2010).
P. R. Varekamp, W. C. Simpson, D. K. Shuh, T. D. Durbin, V. Chakarian, and J. A. Yarmoff, Phys. Rev. B 50, 14267 (1994).
W. C. Simpson and J. A. Yarmoff, Ann. Rev. Phys. Chem. 47, 527 (1996).
A. V. Bakulin, S. V. Eremeev, O. E. Tereshchenko, and S. E. Kuľkova, Semiconductors 45, 21 (2011).
W. Mönch, Semiconductor Surfaces and Interfaces (Springer, Berlin, 1993).
V. L. Bercovits, N. Witkowski, Y. Borensztein, and D. Paget, Phys. Rev. B 63, 12314 (2001).
A. Taguchi and K. Kanisawa, Appl. Surf. Sci. 252, 5263 (2006).
P. E. Blöchl, Phys. Rev. B 50, 17953 (1994).
G. Kresse and J. Joubert, Phys. Rev. B 59, 1758 (1999).
G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
G. Kresse and J. Furthmuller, Comput. Mater. Sci. 6, 15 (1996).
J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).
A. V. Bakulin, S. V. Eremeev, and S. E. Kul’kova, in Proceedings of the 2nd International School-Conference of Young Scientists on Physics and Chemistry of Nanomaterials (Tomsk, 2009), p. 13.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.V. Eremeev, N.A. Valisheva, O.E. Tereshchenko, S.E. Kulkova, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 1, pp. 53–59.
Rights and permissions
About this article
Cite this article
Eremeev, S.V., Valisheva, N.A., Tereshchenko, O.E. et al. Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption. Semiconductors 46, 49–55 (2012). https://doi.org/10.1134/S1063782612010083
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782612010083