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Electrical and gas sensing properties of por-Si/SnO x nanocomposite layers

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The electrical characteristics and chemical reactant sensitivity of layers of heterogeneous nanocomposites based on porous silicon and nonstoichiometric tin oxide por-Si/SnO x , fabricated by the magnetron sputtering of tin with subsequent oxidation, are studied. It is shown that, in the nanocomposite layers, a system of distributed heterojunctions (Si/SnO x nanocrystals) forms, which determine the electrical characteristics of such structures. The sensitivity of test sensor structures based on por-Si/SnO x nanocomposites to NO2 is determined. A mechanism for the effect of the adsorption of NO2 molecules on the current-voltage characteristics of the por-Si(p)/SnO x (n) heterojunctions is suggested.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics (Omsk Branch), Russian Academy of Sciences, Siberian Branch, 5-ya Kordnaya ul. 29, Omsk, 644018, Russia

    V. V. Bolotov, V. E. Roslikov, E. A. Kurdyukova, O. V. Krivozubov, Yu. A. Sten’kin & D. V. Cheredov

Authors
  1. V. V. Bolotov
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  2. V. E. Roslikov
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  3. E. A. Kurdyukova
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  4. O. V. Krivozubov
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  5. Yu. A. Sten’kin
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  6. D. V. Cheredov
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Corresponding author

Correspondence to V. V. Bolotov.

Additional information

Original Russian Text © V.V. Bolotov, V.E. Roslikov, E.A. Kurdyukova, O.V. Krivozubov, Yu.A. Sten’kin, D.V. Cheredov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 1, pp. 109–112.

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Bolotov, V.V., Roslikov, V.E., Kurdyukova, E.A. et al. Electrical and gas sensing properties of por-Si/SnO x nanocomposite layers. Semiconductors 46, 105–108 (2012). https://doi.org/10.1134/S1063782612010058

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  • DOI: https://doi.org/10.1134/S1063782612010058

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