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Tin impurity centers in glassy germanium chalcogenides

  • Amorphous, Vitreous, and Organic Semiconductors
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Abstract

Tin atoms produced by radioactive decay of 119mmSn and 119Sn impurity atoms in the structure of Ge x S1 − x and Ge x Se1 − x glasses are stabilized in the form of Sn2+ and Sn4+ ions and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn2+ is an ionized acceptor, and Sn4+ is an ionized donor), whereas the neutral state of the Sn3+ center appears to be unstable. 119Sn atoms produced by radioactive decay of 119mTe impurity atoms in the structure of Ge x S1 − x and Ge x Se1 − x glasses are stabilized at both chalcogen sites (they are electrically inactive) and germanium sites.

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Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, ul. Moika 48, St. Petersburg, 191186, Russia

    G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko & P. P. Seregin

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    E. I. Terukov

Authors
  1. G. A. Bordovsky
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  2. P. V. Gladkikh
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  3. M. Yu. Kozhokar
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  4. A. V. Marchenko
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  5. P. P. Seregin
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  6. E. I. Terukov
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Corresponding author

Correspondence to P. P. Seregin.

Additional information

Original Russian Text © G.A. Bordovsky, P.V. Gladkikh, M.Yu. Kozhokar, A.V. Marchenko, P.P. Seregin, E.I. Terukov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 10, pp. 1399–1404.

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Bordovsky, G.A., Gladkikh, P.V., Kozhokar, M.Y. et al. Tin impurity centers in glassy germanium chalcogenides. Semiconductors 45, 1346–1351 (2011). https://doi.org/10.1134/S1063782611100058

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  • DOI: https://doi.org/10.1134/S1063782611100058

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