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Photoluminescence in silicon implanted with erbium ions at an elevated temperature

Abstract

Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er3+ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.

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Correspondence to N. A. Sobolev.

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Original Russian Text © N.A. Sobolev, A.E. Kalyadin, E.I. Shek, V.I. Sakharov, I.T. Serenkov, V.I. Vdovin, E.O. Parshin, M.I. Makoviichuk, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 8, pp. 1038–1040.

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Sobolev, N.A., Kalyadin, A.E., Shek, E.I. et al. Photoluminescence in silicon implanted with erbium ions at an elevated temperature. Semiconductors 45, 1006 (2011). https://doi.org/10.1134/S1063782611080197

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Keywords

  • Erbium
  • Annealing Duration
  • Band Edge Luminescence
  • Dislocation Related Luminescence
  • High Resolution Electron Micrographs