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Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

  • Physics of Semiconductor Devices
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Abstract

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

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Authors and Affiliations

  1. National Institute of Science and Technology, Palur Hills, Berhampur, 761008, Odisha, India

    T. R. Lenka & A. K. Panda

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  1. T. R. Lenka
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  2. A. K. Panda
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Correspondence to T. R. Lenka.

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Lenka, T.R., Panda, A.K. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT. Semiconductors 45, 650–656 (2011). https://doi.org/10.1134/S1063782611050198

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  • DOI: https://doi.org/10.1134/S1063782611050198

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