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Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa2Se4

  • Electronic Properties of Semiconductors
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Abstract

The results of investigation of the temperature dependence of CdGa2Se4 absorption coefficient in the polarized radiation at 5–300 K and that of the emission intensity at 4.2–77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiation intensity with decreasing temperature are attributed to a different velocity of motion of states of the valence-band top Γ3 + Γ4 and Γ2 with changing tetragonal compression.

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of Azerbajan, AZ-1143, Baku, Azerbaijan

    T. G. Kerimova & R. A. Guliyev

Authors
  1. T. G. Kerimova
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  2. R. A. Guliyev
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Correspondence to T. G. Kerimova.

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Original Russian Text © T.G. Kerimova, R.A. Guliyev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 3, pp. 303–305.

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Kerimova, T.G., Guliyev, R.A. Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa2Se4 . Semiconductors 45, 292–294 (2011). https://doi.org/10.1134/S1063782611030134

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  • DOI: https://doi.org/10.1134/S1063782611030134

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