Abstract
Autosolitons in the bistable system of silicon associated with the thermal and electric-field ionization of In deep acceptor levels at a temperature of 77 K are experimentally found and investigated. It is shown that the positive feedback on the activator is related in the considered model of autosolitons to an increasing dependence of the lattice temperature on growth in the hole concentration, while the damping role of the inhibitor is associated with a decrease in the charge-carrier temperature during phonon-induced scattering. This leads to power-loss reduction and lattice-temperature restriction in the vicinity of autosolitons.
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References
B. S. Kerner and V. V. Osipov, Autosolitons (Nauka, Moscow, 1991) [in Russian].
B. S. Kerner and V. F. Sinkevich, Pis’ma Zh. Eksp. Teor. Fiz. 36, 359 (1982) [JETP Lett. 36, 436 (1982)].
V. N. Vawenko, B. S. Kerner, V. V. Osipov, and V. F. Sinkevich, Fiz. Tekh. Poluprovodn. 24, 1705 (1990) [Sov. Phys. Semicond. 24, 1065 (1990)].
A. M. Musaev, Fiz. Tekh. Poluprovodn. 33, 1183 (1999) [Semiconductors 33, 1076 (1999)].
A. M. Musaev, Fiz. Tekh. Poluprovodn. 38, 1030 (2004) [Semiconductors 38, 992 (2004)].
S. P. Kalvenas, Lit. Fiz. Sb. XXII(1), 91 (1982).
A. Matulis and A. Chenis, Lit. Fiz. Sb. XIX(3), 363 (1979).
A. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973; Mir, Moscow, 1977).
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Original Russian Text © A.M. Musaev, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 10, pp. 1168–1171.