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EBIC characterization of light-emitting structures based on GaN

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

EBIC investigations of light-emitting structures based on InGaN/GaN MQW with different numbers of wells have been carried out. A pronounced dependence of collection efficiency on quantum-well number is observed. A comparison with apparent carrier profiles calculated from C-V curves reveals a correlation between the collection efficiency and location of quantum well inside the depletion region. Defects producing bright EBIC contrast are revealed in the structure with five quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. M. Shmidt

  2. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    P. S. Vergeles & E. B. Yakimov

Authors
  1. N. M. Shmidt
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  2. P. S. Vergeles
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  3. E. B. Yakimov
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The text was submitted by the authors in English.

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Shmidt, N.M., Vergeles, P.S. & Yakimov, E.B. EBIC characterization of light-emitting structures based on GaN. Semiconductors 41, 491–494 (2007). https://doi.org/10.1134/S1063782607040264

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  • DOI: https://doi.org/10.1134/S1063782607040264

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