Abstract
This paper presents a short description of a thin film parameter study technique based on the analysis of energy and angular spectra of ions backscattered from the film with initial energies in the 50–250 keV range, as well as on the registration of characteristic X-ray radiation induced in the film under study by the probing ion beam. The technique is a nondestructive one and makes it possible to determine the geometrical parameters of the film, the element composition and its change with depth, and the crystal structure quality of the film as a whole and of sublattices of definite elements. Some examples are given on the application of this technique to the study of multicomponent film structures at different stages of their growth.
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Afrosimov, V.V., Il’in, R.N., Sakharov, V.I. et al. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique. Semiconductors 41, 487–490 (2007). https://doi.org/10.1134/S1063782607040252
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DOI: https://doi.org/10.1134/S1063782607040252