Abstract
A Cathodoluminescence (CL) method has been used for studies of ZnSe-based heterostructures with a CdSe fractional-monolayer recombination region. Electron beams with energies of 1–25 keV provide the ability to analyze CL bands associated with different layers of the heterostructure and revealed on the CL spectrum at different electron-beam penetration depth. Comparative analysis of the CL bands both from the recombination region and the upper layers has been used to characterize the transport properties of the structure. The correlation between the density and size distribution of quantum dots and full width at half maximum and spectral position of the CL bands has been studied in detail.
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Ivanov, A.S., Vasilev, V.I., Sedova, I.V. et al. Cathodoluminescence of laser AIIBVI heterostructures. Semiconductors 41, 478–481 (2007). https://doi.org/10.1134/S1063782607040239
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DOI: https://doi.org/10.1134/S1063782607040239