Skip to main content
SpringerLink
Log in

Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well ∼12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of γ-radiation with several doses on the cathodoluminescence spectra was examined.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. V. Zamoryanskaya, S. G. Konnikov, and A. N. Zamoryanskiĭ, Instrum. Exp. Tech. 47, 477 (2004).

    Article  Google Scholar 

  2. G. Bastard and J. A. Brum, IEEE J. Quantum Electron. 22, 1625 (1986).

    Article  ADS  Google Scholar 

  3. S. K. Brierley, W. E. Hoke, P. S. Lyman, and H. T. Hendriks, Appl. Phys. Lett. 59, 3306 (1991).

    Article  ADS  Google Scholar 

  4. P. J. Potts, A Handbook of Silicate Rock Analysis (Blackie, Glasgow, 1987).

    Google Scholar 

  5. A. V. Bobyl’, A. A. Gutkin, P. N. Brunkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 707 (2006) [Semiconductors 40, 687 (2006)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. S. Khrustalev, A. V. Bobyl, S. G. Konnikov, N. A. Maleev & M. V. Zamoryanskaya

Authors
  1. V. S. Khrustalev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Bobyl
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. G. Konnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. N. A. Maleev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. V. Zamoryanskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

The text was submitted by the authors in English.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Khrustalev, V.S., Bobyl, A.V., Konnikov, S.G. et al. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging. Semiconductors 41, 473–477 (2007). https://doi.org/10.1134/S1063782607040227

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782607040227

PACS numbers

Search

Navigation