Abstract
In this paper, the local cathodoluminescence method was used to study the characteristics of the SiO2-Si interface, the change of its properties during oxidation, and the influence of the type of silicon conductivity on its properties. This research shows that the first phase of silicon oxidation is the formation of amorphous silicon layers on the silicon surface and the appearance of silicon clusters in the natural silicon oxide. Cathodoluminescence gives the possibility of finding the presence of point defects in silicon oxide and silicon and of studying the distribution of such defects on the surface and in the depth.
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Zamoryanskaya, M.V., Sokolov, V.I. Cathodoluminescence study of silicon oxide-silicon interface. Semiconductors 41, 462–468 (2007). https://doi.org/10.1134/S1063782607040203
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DOI: https://doi.org/10.1134/S1063782607040203