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Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.

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Authors and Affiliations

  1. IHP, 15236, Frankfurt (Oder), Germany

    X. Yu, M. Kittler, W. Seifert & T. Arguirov

  2. IHP/BTU Joint Lab, Cottbus, 03046, Germany

    X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mtchedlidze & T. Arguirov

  3. MPI für Mikrostrukturphysik, Halle, 06120, Germany

    M. Reiche

  4. St. Petersburg State University, St. Petersburg, 198504, Russia

    O. Vyvenko

Authors
  1. X. Yu
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  2. O. Vyvenko
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  3. M. Kittler
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  4. W. Seifert
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  5. T. Mtchedlidze
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  6. T. Arguirov
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  7. M. Reiche
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The text was submitted by the authors in English.

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Yu, X., Vyvenko, O., Kittler, M. et al. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding. Semiconductors 41, 458–461 (2007). https://doi.org/10.1134/S1063782607040197

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  • DOI: https://doi.org/10.1134/S1063782607040197

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