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Initial stages of gold adsorption on silicon stepped surface at elevated temperatures

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

Experimental study performed by ultrahigh vacuum reflection electron microscopy and atomic force microscopy reveals step instability on Si(111) surface during gold deposition at elevated temperatures (higher than 900°C). Our results show that transformations of regular atomic steps into the system of step bunches and vice versa depend on the gold coverage and direction of the electrical current heating the sample. The mechanism and conditions of the surface morphology transformations are discussed.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia

    S. S. Kosolobov, E. E. Rodyakina & A. V. Latyshev

  2. Samsung Advanced Institute of Technology, 440-600, POB 111, Suwon, Korea

    Se Ahn Song

Authors
  1. S. S. Kosolobov
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  2. Se Ahn Song
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  3. E. E. Rodyakina
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  4. A. V. Latyshev
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The text was submitted by the authors in English.

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Kosolobov, S.S., Song, S.A., Rodyakina, E.E. et al. Initial stages of gold adsorption on silicon stepped surface at elevated temperatures. Semiconductors 41, 448–452 (2007). https://doi.org/10.1134/S1063782607040173

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  • DOI: https://doi.org/10.1134/S1063782607040173

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