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Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

A method of calculation of the distributions of minority charge carriers generated in a two-layer semiconductor by a wide electron beam with energies 5–30 keV based on the use of the model of independent sources is described.

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Authors and Affiliations

  1. Tsiolkovskii Kaluga State Pedagogical University, Kaluga, 248000, Russia

    I. V. Burylova & M. A. Stepovich

  2. Moscow State University, Moscow, 119992, Russia

    V. I. Petrov

  3. Kaluga Branch, Bauman Moscow State Technical University, Kaluga, 248000, Russia

    M. G. Snopova

Authors
  1. I. V. Burylova
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  2. V. I. Petrov
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  3. M. G. Snopova
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  4. M. A. Stepovich
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The text was submitted by the authors in English.

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Burylova, I.V., Petrov, V.I., Snopova, M.G. et al. Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam. Semiconductors 41, 444–447 (2007). https://doi.org/10.1134/S1063782607040161

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  • DOI: https://doi.org/10.1134/S1063782607040161

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