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STM and LEED studies of atomically ordered terraced Si(557) surfaces

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
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Abstract

We report results of LEED, STM, and photoemission studies of the atomic and electronic structure of atomically ordered terraced Si(hhm) surfaces. LEED and STM data demonstrate the possibility of fabricating atomically accurate terraced structures based on Si(557) with different periodicities depending on the thermal treatment procedure. Atomically resolved STM images reveal (7 × 7) terrace ordering and triple step structure. Comparative photoemission studies of the valence band and Si 2p core level electronic structure have been done on clean stepped surfaces with different terrace widths (namely, Si(557), Si(556)) and flat Si(111)-(7 × 7).

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    A. N. Chaika, S. I. Bozhko, A. M. Ionov, A. N. Myagkov & N. V. Abrosimov

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  1. A. N. Chaika
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  2. S. I. Bozhko
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  3. A. M. Ionov
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  4. A. N. Myagkov
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  5. N. V. Abrosimov
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The text was submitted by the authors in English.

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Chaika, A.N., Bozhko, S.I., Ionov, A.M. et al. STM and LEED studies of atomically ordered terraced Si(557) surfaces. Semiconductors 41, 431–435 (2007). https://doi.org/10.1134/S1063782607040136

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  • DOI: https://doi.org/10.1134/S1063782607040136

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