Abstract
Presently, there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect-gap semiconductor, silicon is poorly efficient as a light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approaches to enhance the radiative emission from Si is the controlled introduction of micro-(dislocations) or nano-(nanocrystals) structures, which, providing quantum confinement of free carriers, prevent their diffusion towards non-radiative channels. Dislocations introduced in silicon by plastic deformation and Si nanocrystals embedded in the amorphous silicon matrix have been investigated by junction spectroscopy and scanning probe microscopy methods.
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Cavalcoli, D., Cavallini, A., Rossi, M. et al. Micro-and nano-structures in silicon studied by DLTS and scanning probe methods. Semiconductors 41, 421–426 (2007). https://doi.org/10.1134/S1063782607040112
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DOI: https://doi.org/10.1134/S1063782607040112