Abstract
The potentialities of photoinduced transient spectroscopy in terms of investigation of defect centers in wide-band-gap semiconductors are presented. An experimental system dedicated to measurements of the photocurrent transients at temperatures 20–800 K is described and a new approach to extraction of trap parameters from the photocurrent relaxation waveforms recorded in a selected temperature range is presented. The approach is based on the two-dimensional analysis of the waveforms as a function of time and temperature using the correlation procedure. As a result, three-dimensional images showing the temperature changes of the emission rate for detected defect centers are produced and a neural network method is applied to determine the parameters of defect centers. The new approach is exemplified by studies of defect centers in high-resistivity GaN: Mg and semi-insulating 6H-SiC: V.
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Kamiński, P., Kozłowski, R., Kozubal, M. et al. Photoinduced transient spectroscopy of defect centers in GaN and SiC. Semiconductors 41, 414–420 (2007). https://doi.org/10.1134/S1063782607040100
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DOI: https://doi.org/10.1134/S1063782607040100