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EBIC measurements of small diffusion length in semiconductor structures

  • The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia
  • Published:
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Abstract

The problems arising under submicron diffusion-length measurements by EBIC are discussed. As an example, the results of diffusion-length measurements in GaN are presented. It is shown that fitting the collection efficiency dependence on beam energy is the most reliable method for this purpose. The depth-dose dependence for GaN is calculated by the Monte-Carlo method and its analytical approximation is presented. This expression was verified experimentally by simultaneous fitting of the collected current dependence on beam energy for a few applied bias values.

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Authors and Affiliations

  1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    E. B. Yakimov & S. I. Zaitsev

  2. Physical Department, M. V. Lomonosov Moscow State University, Moscow, 119992, Russia

    S. S. Borisov

Authors
  1. E. B. Yakimov
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  2. S. S. Borisov
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  3. S. I. Zaitsev
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The text was submitted by the authors in English.

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Yakimov, E.B., Borisov, S.S. & Zaitsev, S.I. EBIC measurements of small diffusion length in semiconductor structures. Semiconductors 41, 411–413 (2007). https://doi.org/10.1134/S1063782607040094

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  • DOI: https://doi.org/10.1134/S1063782607040094

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