Abstract
Characteristics of AlGaInN LEDs with removed sapphire substrate are studied. To remove the substrate from a finished LED crystal mounted by the flip-chip method onto a silicon wafer, the laser lift-off technique was used. To raise the light output efficiency, a scattering profile was formed on the n-GaN surface by ion etching in a Cl2: Ar gas mixture. This resulted in the 25–30% increase in the external quantum efficiency of LEDs. The LEDs fabricated in this way demonstrate stable operation at drive currents of up to 300 mA with an optical power as high as 110 mW.
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Original Russian Text © I.P. Smirnova, L.K. Markov, D.A. Zakheim, E.M. Arakcheeva, M.R. Rymalis, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 11, pp. 1397–1401.
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Smirnova, I.P., Markov, L.K., Zakheim, D.A. et al. Blue flip-chip AlGaInN LEDs with removed sapphire substrate. Semiconductors 40, 1363–1367 (2006). https://doi.org/10.1134/S1063782606110194
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DOI: https://doi.org/10.1134/S1063782606110194