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Hopping conductivity in low-porosity mesoporous silicon formed on p +-Si:B

  • Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors: Semiconductor Composites
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Abstract

The temperature dependence of the dc electrical conductivity of mesoporous silicon layers formed on (111)p +-Si:B wafers with a resistivity of 0.03 Ω cm is studied in the temperature range 110–400 K. The mass porosity was in the range 18–30%. It was shown that the classical law of variable-range hopping conductivity near the Fermi level is observed at temperatures below 200 K. An analysis of the temperature dependence of the resistivity at higher temperatures (200–400 K) revealed two regions of activated behavior with activation energies of 200–800 and 600–1200 meV. The temperature dependence of the conductivity of the samples studied can be described in a wide temperature range in terms of the model of disordered semiconductors with small-scale fluctuations.

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Authors and Affiliations

  1. Demidov State University, Yaroslavl, 150000, Russia

    S. P. Zimin

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  1. S. P. Zimin
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Original Russian Text © S.P. Zimin, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 11, pp. 1385–1387.

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Zimin, S.P. Hopping conductivity in low-porosity mesoporous silicon formed on p +-Si:B. Semiconductors 40, 1350–1352 (2006). https://doi.org/10.1134/S1063782606110170

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  • DOI: https://doi.org/10.1134/S1063782606110170

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