Abstract
Computer simulations of a plasma sheath formed near a nonconducting surface in a beamplasma discharge (BPD) at a low magnetic field in the reactor chamber are performed. The results of computer simulations are compared with experimental data. The optimal mode of GaAs etching in a BPD-based plasma processing reactor is chosen using results of computer simulations. Simulations for carbon (DLC) film sputtering modes in the framework of a similar model are also performed.
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Original Russian Text © V.A. Kurnaev, V.V. Peskov, A.I. Chmil’, E.G. Shustin, 2009, published in Prikladnaya Fizika, 2009, No. 6, pp. 118–122.
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Kurnaev, V.A., Peskov, V.V., Chmil’, A.I. et al. Ion flux onto a nonconducting surface in a beam-plasma discharge: Simulation and experiment. Plasma Phys. Rep. 36, 1177–1180 (2010). https://doi.org/10.1134/S1063780X10130143
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DOI: https://doi.org/10.1134/S1063780X10130143