Abstract
Quantum and difference oscillations of interlayer conductivity in a multilayer system of thin films of topological insulators (TIs) are investigated. Due to the linearity of the carrier spectrum in such a system, new features of quantum oscillations arise. In particular, the frequencies of de Haas–van Alfvén and Shubnikov–de Haas oscillations depend quadratically on the chemical potential, rather than linearly as in systems with parabolic carrier spectrum. For the same reason, the temperature damping factor of oscillations contains the chemical potential. This is due to the nonequidistant character of the Landau levels: the higher the chemical potential, the smaller the distance between Landau levels. However, the beat frequencies, as well as the frequencies of slow oscillations, do not depend on the chemical potential; in this sense, the behavior of these systems is similar to that of conventional non-Dirac systems. Finally, in the Born approximation (in the second order cross-diagram technique), we considered the general case when the interlayer conductivity takes into account both intra- and interband transitions. We have shown that the contribution of intraband transitions is insignificant for the conductivity oscillations in the absence of magnetic impurities. However, in the presence of a Dirac point in the spectrum, a linear (in magnetic field) intraband contribution to conductivity arises from the zero Landau level. At low temperatures, this contribution is exponentially small compared to the intraband contribution and vanishes at zero temperature.
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Funding
The work of (A. Z. Z.) was supported by the Russian Science Foundation (project no. 22-72-00110), and the work of (P. D. G.) was supported by the Russian Foundation for Basic Research (project nos. 21-52-12043 and 21-52-12027), as well as within the Strategic Academic Leadership Program “Priority-2030” (grant no. K2-2022-025 from NUST MISIS).
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Translated by I. Nikitin
Appendices
APPENDIX A
Hamiltonian and Spectrum
The Hamiltonian of a heterostructure consisting of topological insulators and conventional dielectric films can be expressed as (see [58])
Here \(\hat {z}\) is the unit vector in the Z direction. Then
which is the Hamiltonian of chiral Dirac electrons on one of the surfaces of the topological insulator. The expression [\(\hat {z}\) × σ] ⋅ k⊥ corresponds to chirality, which can be easily understood by the left-hand rule: place the left hand palm down on a table. Then the four stretched fingers indicate the direction of the momentum, and the thumb bent at 90° shows the direction of the spin. This orientation corresponds to one chirality. The state with opposite chirality can be represented similarly, except instead of the left hand one should take the right hand. The two TI surfaces are taken into account by the Pauli matrix τz, which contains two values of chirality. The indices i and j number the layers of the topological insulator. The term with ΔS corresponds to hopping between the upper and lower surfaces of the same layer. The Hamiltonian is written in the basis of the states (1 0)T and (0 1)T, which indicate membership in the upper and lower surfaces of a given layer of the topological insulator. In this basis, the mixing of surfaces (hopping between them) is given by the Pauli matrix τx:
The delta function δi, j in this term indicates that the hopping occurs within a single layer. The remaining terms describe hopping between adjacent layers of the TI through the dielectric layers. The term with τ+ denotes hopping from the lower surface of a given layer to the upper surface of the adjacent lower layer: the symbol δj, i + 1 is different from zero for the transitions j → i = j – 1. This is clear from the explicit form of the matrix
which maps the state (0 1)T (corresponding to the lower surface) to (1 0)T (corresponding to the upper surface), but not vice versa. The term with τ– denotes hopping from the upper surface of a given layer to the lower surface of the adjacent upper layer: the symbol δj, i – 1 is different from zero for the transitions j → i = j + 1. The matrix
maps the state (1 0)T to (0 1)T, but not vice versa.
Let us find the spectrum corresponding to such a Hamiltonian. To this end, we represent all delta symbols in terms of Fourier transforms:
where we used the representation
Here ri ± 1 = ri ± d, and N is the number of layers. Accordingly, in the momentum space we have
The spectrum of such a Hamiltonian is easily found:
where
The Hamiltonian has SO(3) symmetry:
Therefore, it can be represented in the block diagonal form \({{\mathcal{H}}_{k}}\) = τz\({{\tilde {\mathcal{H}}}_{k}}\), where
This means that it is sufficient to deal with one of the blocks of this form.
APPENDIX B
Density of States, Thermodynamic Potential, and Magnetization
We have formula (5) for the density of states. Let us apply the Poisson formula
Consider separately the oscillating and nonoscillating parts. For the nonoscillating part we have
where NLL = 2/π\(l_{H}^{2}\) is the degeneracy of the Landau levels. Summing over the band index, we obtain
Integrating first with respect to kz, we obtain
where
Δ = |ΔS – ΔD|, and N = L/d is the number of layers. The density of states contains singular points, which correspond to the minimum and maximum of the cosine profile of the Landau levels. For example, for the zero level, these are the points \(\varepsilon _{ \pm }^{2}\) = (ΔS ± ΔD)2. These are nothing but van Hove singularities. Indeed, the spectrum becomes flat near its extrema, which leads to a singularity of the density of states due to the degeneracy of the Landau levels. To integrate with respect to x, we pass to a new variable:
After straightforward integration, we obtain formula (7).
Now, consider the oscillating part
First, we integrate with respect to x:
Integration with respect to kz finally yields expression (8).
Now, we obtain an expression for the oscillating part of the thermodynamic potential. Substituting the expression for the density of states into (10), we obtain
Introduce intermediate notations:
Integration with respect to energy yields the integral
Let us represent the integral as
and first integrate by parts:
where we replaced the lower limit by –∞, because we use the approximation \(\frac{{\mu - \Delta }}{T}\) ≫ 1.
First of all we deal with the first term. Integrating with respect to kz in the thermodynamic potential, we find
This integral is real. Hence, the contribution of the first term of (47) to the thermodynamic potential vanishes.
Next, consider the integral
where we applied the method of residues. Hence
Substituting this expression into the thermodynamic potential, integrating with respect to kz, and taking into account that
we finally obtain
Due to the rapid convergence of the series in n, we neglect the dependence of the oscillating part on n. Then the series is easily summed, and we obtain expression (19).
APPENDIX C
Interlayer Transport
Let us analyze the behavior of the function I(ε). For the velocity \({{{v}}_{z}}\) in the spectrum we obtain
Using (2), we obtain
Applying the Poisson formula and summing over α, we obtain
Integrating with respect to z, we find
Passing to a new variable
we obtain
Now, consider the oscillating part
Passing to a new variable
we obtain
Using the formula
we obtain
Thus,
APPENDIX D
Interlayer Conductivity with a Nondiagonal Matrix Element of the Velocity Operator
Let us obtain an expression for the static conductivity with the use of the Kubo formula,
Here
is the Fourier component of the two-time retarded Green function, which is expressed in the imaginary time representation as
where the brackets 〈…〉 denote the Gibbs averaging and averaging over impurities.
Expressing the current operator of free particles in terms of the second quantization operators, we obtain
Here \({{K}_{{{{\omega }_{n}}}}}\)(k1σ1, k1σ1; k2σ2, k2σ2) is the Fourier transform of the two-particle Green function
where 1 = k1, σ1. In the first approximation, we can represent PR(ωn) by the diagram shown in Fig. 3. Then we obtain
where we took into account the equality
which is valid when averaged over impurities. The function G(k1, τ) is obtained under expansion in the impurity potential over all disconnected diagrams.
The standard expansion of the Green functions in Fourier series yields
which allows us to calculate the sum
To this end, we calculate
where the indices correspond to momenta. Consider the integral in the complex plane,
where the contour C encloses all the poles of the distribution function f(z), i.e., the points zs = iζs, and the functions G1, 2(z) are analytic continuations of the Green functions from the discrete points zs = iζs to the whole complex plane. Then, by the residue theorem, we have
On the other hand, we can change the contour, taking into account the singularities of the Green functions G1 and G2. Let us consider these singularities.
The Green function G(z) can be represented in terms of the spectral density as
This integral represents a Cauchy integral, where the contour passes along the real axis. Consequently, the real axis is a singularity at which the Green function is not analytic. Moreover, on either side of this axis, the functions GR(z) (in the upper half-plane) and GA(z) (in the lower half-plane) are analytic. Similarly, for the function G2(z – i\(\hbar \)ωn), such a singularity is given by the line Imz – \(\hbar \)ωn = 0. These singularities should be removed from the complex plane by means of cuts by appropriately changing the integration contour.
Since G(z) ~ z–1 as z → ∞, the corresponding contributions from the segments of the circle vanish, and the integral is determined only by the banks of the cut.
Then
Taking into account that f(ε + i\(\hbar \)ωn) = f(ε), we obtain
Analytic continuation to the upper half-plane yields
Taking into account the expression for the spectral density
and omitting the indices, we substitute this function into the analytic continuation \(P_{{(1)}}^{R}\)(ω):
Changing the notation k1 \( \rightleftarrows \) k2 in the second term in this expression, we find
For the imaginary part we have
Changing the notation k1 \( \rightleftharpoons \) k2 in the second term, we obtain
Thus,
Accordingly, for the interlayer conductivity we obtain
where
In the case of diagonal velocity matrix elements, we obtain the expression
In the case of a small number of impurities ni, we can show that
and we arrive at formula (14).
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Alisultanov, Z.Z., Abdullaev, G.O., Grigoriev, P.D. et al. Quantum Oscillations of Interlayer Conductivity in a Multilayer Topological Insulator. J. Exp. Theor. Phys. 136, 353–367 (2023). https://doi.org/10.1134/S106377612303010X
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DOI: https://doi.org/10.1134/S106377612303010X