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Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

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Abstract

The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.

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Funding

This work was supported by the Russian Science Foundation (project no. 19-19-00286). The simulations were performed at the computational cluster of the Data Processing Center of the Novosibirsk State University.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia

    T. V. Perevalov, R. M. Kh. Iskhakzai, V. Sh. Aliev & V. A. Gritsenko

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    T. V. Perevalov & V. A. Gritsenko

  3. Boreskov Institute of Catalysis, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia

    I. P. Prosvirin

Authors
  1. T. V. Perevalov
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  2. R. M. Kh. Iskhakzai
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  3. V. Sh. Aliev
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  4. V. A. Gritsenko
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  5. I. P. Prosvirin
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Correspondence to T. V. Perevalov.

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Translated by V. Astakhov

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Perevalov, T.V., Iskhakzai, R.M., Aliev, V.S. et al. Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma. J. Exp. Theor. Phys. 131, 940–944 (2020). https://doi.org/10.1134/S1063776120110084

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  • DOI: https://doi.org/10.1134/S1063776120110084

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