Skip to main content
SpringerLink
Log in

Dependence of the permittivity of direct gap semiconductors on hydrostatic pressure

  • Electronic Properties of Solid
  • Published:
Journal of Experimental and Theoretical Physics Aims and scope Submit manuscript

Abstract

The pressure dependence of permittivity χ of direct gap ZnO, CdTe, InSb, InAs, CdSnAs2, and CdGeAs2 semiconductors in the hydrostatic pressure range from zero to 1 GPa is determined from the results of quantitative analysis of the pressure dependences of resistivity ρ(P) and Hall constant R H (P). It is found that the dielectric constant decreases upon an increase in pressure so that coefficient (dχ/d P )/χ increases with (dE g /dP)/E g .

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. M. Ziman, Principles of the Theory of Solids (Cambridge University Press, Cambridge, 1964; Mir, Moscow, 1974).

    Google Scholar 

  2. L. F. Vereshchagin and S. S. Kabalkina, X-Ray Diffraction Investigations under High Pressure (Nauka, Moscow, 1979) [in Russian].

    Google Scholar 

  3. V. W. Paul and D. M. Warschauer, Solids under Pressure, (McGraw-Hill, New York, 1963; Mir, Moscow, 1966).

    Google Scholar 

  4. M. Cardona, H. Paul, and H. S. Brooks, Phys. Chem. Solids 8, 204 (1959).

    Article  ADS  Google Scholar 

  5. M. Cardona, H. Paul, and H. Brooks, Helv. Phys. Acta 33, 329 (1960).

    Google Scholar 

  6. Kh. K. Abduvakhidov, A. S. Volkov, and V. V. Galavanov, Sov. Phys. Semicond. 4 (11), 1870 (1970).

    Google Scholar 

  7. A. R. Coni, K. Syassen, and M. Cardona, Phys. Rev. B: Condens. Matter 41, 10104 (1990).

    Article  Google Scholar 

  8. E. S. Itskevich, in Physical Investigations at High Pressures: A Collection of Articles, Ed. by A. I. Laisaar (Academy of Sciences of Est. SSR, Tallin, Soviet Union, 1977) [in Russian].

  9. I. A. Nikolaev and A. A. Starostin, Sov. Phys. JETP 64 (3), 589 (1986).

    Google Scholar 

  10. A. L. Polyakova, Deformation of Semiconductors and Semiconductor Devices (Energiya, Moscow, 1979) [in Russian].

    Google Scholar 

  11. R. W. Keys, Solid State Phys. 11, 149 (1960).

    Google Scholar 

  12. M. I. Daunov, M. M. Gadzhialiev, A. M. Musaev, and P. P. Khokhlachev, Bull. Russ. Acad. Sci.: Phys. 73 (7), 998 (2009).

    Article  Google Scholar 

  13. I. K. Kamilov, S. F. Gabibov, M. I. Daunov, and A. Yu. Mollaev, Semiconductors 45 (12), 1543 (2011).

    Article  ADS  Google Scholar 

  14. B. M. Askerov, Kinetic Effects in Semiconductors (Nauka, Leningrad, 1970) [in Russian].

    Google Scholar 

  15. M. I. Daunov, A. S. Kovalev, A. Yu. Mollaev, and A. B. Magomedov, Semiconductors 45 (1), 43 (2011).

    Article  ADS  Google Scholar 

  16. L. Konczewicz and S. Porowski, High Temp.–High Pressures 7, 716 (1975).

    Google Scholar 

  17. M. I. Daunov, A. B. Magomedov, and A. E. Ramazanova, Sov. Phys. J. 29 (8), 661 (1986).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Research Center, Russian Academy of Sciences, Makhachkala, 367003, Russia

    M. M. Gadzhaliev, M. I. Daunov & A. M. Musaev

Authors
  1. M. M. Gadzhaliev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. I. Daunov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. M. Musaev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. M. Musaev.

Additional information

Original Russian Text © M.M. Gadzhaliev, M.I. Daunov, A.M. Musaev, 2015, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 148, No. 2, pp. 304–307.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gadzhaliev, M.M., Daunov, M.I. & Musaev, A.M. Dependence of the permittivity of direct gap semiconductors on hydrostatic pressure. J. Exp. Theor. Phys. 121, 263–266 (2015). https://doi.org/10.1134/S106377611508004X

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106377611508004X

Keywords

Search

Navigation