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Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

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Abstract

The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of μSR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.

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References

  1. V. P. Smilga and Yu. M. Belousov, The Muon Method in Science (Nauka, Moscow, 1991; Nova Science, New York, 1994).

    Google Scholar 

  2. A. O. Vaisenberg, Mu-Meson (Nauka, Moscow, 1964) [in Russian].

    Google Scholar 

  3. J. Imazato, K. Nagamine, T. Yamazaki, B. D. Patterson, E. Holzschuh, and R. F. Kiefl, Phys. Rev. Lett. 53, 1849 (1984).

    Article  ADS  Google Scholar 

  4. H. Keller, R. F. Kiefl, Hp. Baumeler, W. Kündig, B. D. Patterson, J. Imazato, K. Nishiyama, K. Nagamine, T. Yamazaki, and R. I. Grynszpan, Hyperfine Interact. 31, 461 (1986).

    Article  ADS  Google Scholar 

  5. M. Koch, K. Meier, J. Major, A. Seeger, W. Sigle, W. Staiger, W. Templ, E. Widmann, R. Abela, V. Claus, M. Hampele, and D. Herlach, Hyperfine Interact. 65, 1039 (1991).

    Article  ADS  Google Scholar 

  6. V. N. Gorelkin, V. G. Grebinnik, K. I. Gritsai, V. N. Duginov, V. A. Zhukov, T. N. Mamedov, V. G. Olshevsky, V. Yu. Pomyakushin, B. F. Kirillov, B. A. Nikolsky, A. V. Pirogov, and A. N. Ponomarev, Phys. At. Nucl. 56, 1316 (1993).

    Google Scholar 

  7. T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, V. G. Grebinnik, K. I. Gritsaj, V. G. Olshevsky, V. Yu. Pomjakushin, A. V. Stoykov, V. A. Zhukov, I. A. Krivosheev, B. A. Nikolsky, A. N. Ponomarev, and V. N. Gorelkin, Hyperfine Interact. 105, 345 (1997).

    Article  ADS  Google Scholar 

  8. T. N. Mamedov, K. I. Gritsaj, A. V. Stoykov, D. G. Andrianov, V. N. Gorelkin, D. Herlach, U. Zimmermann, O. Kormann, J. Major, and M. Schefzik, Physica B (Amsterdam) 289–290, 574 (2000).

    Google Scholar 

  9. T. N. Mamedov, A. V. Stoikov, and V. N. Gorelkin, Fiz. Elem. Chastits At. Yad. 33, 1005 (2002).

    Google Scholar 

  10. T. N. Mamedov, V. N. Duginov, V. G. Grebennik, K. I. Gritsaj, V. G. Olshevsky, V. Yu. Pomjakushin, V. A. Zhukov, B. F. Kirillov, B. A. Nikolsky, A. V. Pirogov, A. N. Ponomarev, V. A. Suetin, and V. N. Gorelkin, Hyperfine Interact. 86, 717 (1994).

    Article  ADS  Google Scholar 

  11. V. N. Gorelkin, V. G. Grebennik, K. I. Gritsai, V. A. Zhukov, T. N. Mamedov, V. G. Ol’shevski, V. Yu. Pomyakushin, A. V. Stokov, I. L. Chaplygin, I. A. Krivosheev, B. A. Nikol’skii, and A. N. Ponomarev, JETP Lett. 63(7), 566 (1996).

    Article  ADS  Google Scholar 

  12. T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, V. N. Gorelkin, D. Herlach, J. Major, A. V. Stoykov, M. Schefzik, and U. Zimmermann, J. Phys.: Condens. Matter 11, 2849 (1999).

    Article  ADS  Google Scholar 

  13. A. S. Baturin, V. N. Gorelkin, and V. R. Solov’ev, JETP 99(2), 352 (2004).

    Article  ADS  Google Scholar 

  14. J. H. Brewer, S. R. Kreitzman, G. M. Luke, G. D. Morris, C. Niedermayer, T. M. Riseman, W. N. Hardy, E. P. Krasnoperov, E. E. Meilikhov, and V. P. Smilga, JETP Lett. 53(12), 600 (1991).

    ADS  Google Scholar 

  15. W. Higemoto, K. Sotoh, N. Nishida, K. Nishiyama, and K. Nagamine, Hyperfine Interact. 106, 39 (1997).

    Article  ADS  Google Scholar 

  16. E. P. Krasnoperov, E. E. Meilikhov, C. Baines, D. Herlach, G. Solt, U. Zimmermann, and D. G. Eschenko, JETP Lett. 61(12), 993 (1995).

    ADS  Google Scholar 

  17. Yu. M. Belousov and V. P. Smilga, JETP 79(5), 811 (1994).

    ADS  Google Scholar 

  18. Yu. M. Belousov, JETP 104(2), 215 (2007).

    Article  ADS  Google Scholar 

  19. T. N. Mamedov, D. Adnreika, A. S. Baturin, D. Herlach, V. N. Gorelkin, K. I. Gritsaj, V. G. Ralchenko, A. V. Stoykov, V. A. Zhukov, and U. Zimmermann, Physica B (Amsterdam) 374–375, 390 (2006).

    Google Scholar 

  20. T. N. Mamedov, A. G. Dutov, and D. Gerlakh, V. N. Gorelkin, and K. I. Gritsai, Soobshch. Ob’edin. Inst. Yad. Issled., Dubna, No. P14-2004-104 (2004).

  21. T. N. Mamedov, A. S. Baturin, V. D. Blank, D. Gerlakh, V. N. Gorelkin, and K. I. Gritsai, Soobshch. Ob’edin. Inst. Yad. Issled., Dubna, No. P14-2007-12 (2007).

  22. A. S. Baturin, V. N. Gorelkin, T. N. Mamedov, V. R. Solov’ev, and I. V. Chernousov, Soobshch. Ob’edin. Inst. Yad. Issled., Dubna, No. P14-2007-188 (2007).

  23. A. S. Baturin, V. N. Gorelkin, V. S. Rastunkov, and V. R. Soloviev, Physica B (Amsterdam) 374-375, 340 (2006).

    ADS  Google Scholar 

  24. A. S. Baturin, V. N. Gorelkin, V. R. Solov’ev, and I. V. Chernousov, Plasma Phys. Rep. 34(5), 392 (2008).

    Article  ADS  Google Scholar 

  25. V. N. Abakumov, V. I. Perel’, and I. N. Yassievich, Sov. Phys. Semicond. (Leningrad) 12(1), 1 (1978).

    Google Scholar 

  26. N. L. Aleksandrov, A. M. Konchakov, A. P. Napartovich, and A. N. Starostin, Khim. Plazmy, No. 11, 3 (1984).

  27. O. Mandelung, Semiconductors: Data Handbook (Springer, Berlin, 2004).

    Book  Google Scholar 

  28. B. M. Smirnov, Ions and Excited Atoms in the Plasma (Atomizdat, Moscow, 1974) [in Russian].

    Google Scholar 

  29. M. Lax, Phys. Rev. 119, 1502 (1960).

    Article  ADS  Google Scholar 

  30. V. N. Abakumov and I. N. Yassievich, Sov. Phys. JETP 44(2), 345 (1976).

    ADS  Google Scholar 

  31. R. P. Fedorenko, Introduction to Computational Physics (Moscow Institute of Physics and Technology, Moscow, 1994) [in Russian].

    Google Scholar 

  32. Yu. M. Belousov, J. Phys.: Conf. Ser. 343, 012013 (2012).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Moscow Institute of Physics and Technology (State University), Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700, Russia

    S. A. Antipov, Yu. M. Belousov & V. R. Solov’ev

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  1. S. A. Antipov
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  2. Yu. M. Belousov
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  3. V. R. Solov’ev
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Correspondence to V. R. Solov’ev.

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Original Russian Text © S.A. Antipov, Yu.M. Belousov, V.R. Solov’ev, 2012, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2012, Vol. 142, No. 5, pp. 982–993.

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Antipov, S.A., Belousov, Y.M. & Solov’ev, V.R. Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon. J. Exp. Theor. Phys. 115, 866–875 (2012). https://doi.org/10.1134/S1063776112090026

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