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Investigation of the behaviour of the impurity atoms in Si by μ− SR-method

  • Session 5. Semiconductors and Insulators
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Abstract

The dependence of the residual polarization of negative muons in p-type Si on temperature in the 4.2–270 K range has been investigated. Measurements were carried out in external magnetic field of 0.08 T transverse to the muon spin. The impurity concentration in the sample was 2 · 1013 cm−3. Muon spin relaxation was observed at temperatures below 30 K. The relaxation rate atT=30 K is equal to 0.18±0.08μs−1. The relaxation rate grows with the decrease of temperature and at 4.2 K exceeds 30μs−1. The value of the residual polarization at zero timeP(t=0) is constant within the investigated temperature range.

In the rangeT<30 K data on the relaxation rate are well described by the dependence λ=B·T−q, whereq=2.75. Power dependence of Λ may evidence the essential role of the phonon mechanism in the relaxation of the electron momentum of the acceptor center.

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Authors and Affiliations

  1. Joint Institute for Nuclear Research, P.O. Box 79, 101000, Moscow, Russia

    T. N. Mamedov, V. N. Duginov, V. G. Grebinnik, K. I. Gritsaj, V. G. Olshevsky, V. Yu. Pomjakushin & V. A. Zhukov

  2. RSC “Kurchatov Institute”, Kurchatov sq. 1, 123182, Moscow, Russia

    B. F. Kirillov, B. A. Nikolsky, A. V. Pirogov, A. N. Ponomarev & V. A. Suetin

  3. Moscow Institute of Physics and Technology, Dolgoprudniy, 141700, Moscow Region, Russia

    V. N. Gorelkin

Authors
  1. T. N. Mamedov
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  2. V. N. Duginov
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  3. V. G. Grebinnik
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  4. K. I. Gritsaj
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  5. V. G. Olshevsky
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  6. V. Yu. Pomjakushin
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  7. V. A. Zhukov
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  8. B. F. Kirillov
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  9. B. A. Nikolsky
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  10. A. V. Pirogov
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  11. A. N. Ponomarev
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  12. V. A. Suetin
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  13. V. N. Gorelkin
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Additional information

The authors express their gratitude to V.B. Brudanin and I.A. Yutlandov for providing the sample, and to Yu.B. Gurov for advices.

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Mamedov, T.N., Duginov, V.N., Grebinnik, V.G. et al. Investigation of the behaviour of the impurity atoms in Si by μ− SR-method. Hyperfine Interact 86, 717–722 (1994). https://doi.org/10.1007/BF02068969

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  • DOI: https://doi.org/10.1007/BF02068969

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