Abstract
The nature of the electrical resistivity for low-doped lanthanum manganites is elucidated. The electrical resistivity is described by the Efros-Shklovskii law (lnρ √ (T 0/T)−1/2, where T 0 √ 1/R ls) in the temperature range from T* ≈ 300 K ≈ T C (T C is the Curie temperature for conducting manganites) to their T C and is explained by the tunneling of carriers between localized states. The magnetoresistance is explained by a change in the size of localized states R ls in a magnetic field. The patterns of change in R ls with temperature and magnetic field strength determined from magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a paramagnetic matrix. The sizes R ls and their temperature dependence have been estimated through magnetic measurements. The results confirm the existence of a Griffith phase. The intrinsic inhomogeneities produced by thermodynamic phase separation determine the electrical resistivity and magnetoresistance of lanthanum manganites.
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Original Russian Text © N.I. Solin, 2012, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2012, Vol. 141, No. 1, pp. 109–121.
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Solin, N.I. Intrinsic inhomogeneities of low-doped lanthanum manganites in the paramagnetic temperature range. J. Exp. Theor. Phys. 114, 96–106 (2012). https://doi.org/10.1134/S106377611116014X
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DOI: https://doi.org/10.1134/S106377611116014X