Abstract
Uniaxial compression of n-type silicon under joint impact of temperature and constant electric current revealed a significant increase in its plasticity in comparison with the deformation performed only at high temperatures. The electrical conductivity of n-Si samples is found to increase with a rise in plastic deformation. The surface microstructures of deformed samples are studied, and possible explanation of the observed effects is proposed.
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Translated by Yu. Sin’kov
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Velikhanov, A.R. On the Change in the Form and Parameters of Silicon Compression Curves under Temperature and Electric Current Impacts. Crystallogr. Rep. 64, 1134–1137 (2019). https://doi.org/10.1134/S1063774519070253
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DOI: https://doi.org/10.1134/S1063774519070253