Abstract
The structural changes in the surface layers of silicon substrates, implanted by helium ions with energies from 2 to 5 keV and doses to 6 × 1015–5 × 1017 cm−2, has been studied by high-resolution X-ray reflectometry. The damaged layer is found to have a total thickness comparable with the total ion path length (estimated from the SRIM model) and a multilayer structure: a strongly amorphized layer with reduced density, a porous (incapsulated) layer, and a deformed layer. The thickness of sublayers, their density ρ(z), and the mean strain (∼5 × 10−3) have been determined. The characteristic pore size is estimated to be 5–20 nm. It is shown that the presence of a nanoporous layer facilitates the formation of diffuse scattering, which can be used to diagnose layers by high-resolution X-ray reflectometry.
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Original Russian Text © A.A. Lomov, A.V. Myakonkikh, K.V. Rudenko, Yu.M. Chesnokov, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 374–380.
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Lomov, A.A., Myakonkikh, A.V., Rudenko, K.V. et al. X-ray reflectometry of the specific features of structural distortions of He+-implanted Si(001) surface layers. Crystallogr. Rep. 59, 331–337 (2014). https://doi.org/10.1134/S1063774514020138
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DOI: https://doi.org/10.1134/S1063774514020138