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Growth dynamics of Ge1−x Si x single crystals obtained by directional constitutional supercooling of the melt

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Abstract

The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of Ge1−x Si x crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the Ge1−x Si x crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing Ge1−x Si x single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan National Academy of Sciences, pr. Dzhavida 33, Baku, AZ-1143, Azerbaijan

    G. Kh. Azhdarov & Z. A. Agamaliyev

  2. Ganja State University, pr. Shakh Ismail Khatai 187, Ganja, Azerbaijan

    Z. M. Zeynalov & S. O. Mamedova

Authors
  1. G. Kh. Azhdarov
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  2. Z. M. Zeynalov
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  3. Z. A. Agamaliyev
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  4. S. O. Mamedova
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Corresponding author

Correspondence to G. Kh. Azhdarov.

Additional information

Original Russian Text © G.Kh. Azhdarov, Z.M. Zeynalov, Z.A. Agamaliyev, S.O. Mamedova, 2011, published in Kristallografiya, 2011, Vol. 56, No. 3, pp. 570–574.

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Azhdarov, G.K., Zeynalov, Z.M., Agamaliyev, Z.A. et al. Growth dynamics of Ge1−x Si x single crystals obtained by directional constitutional supercooling of the melt. Crystallogr. Rep. 56, 531–534 (2011). https://doi.org/10.1134/S1063774511030023

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  • DOI: https://doi.org/10.1134/S1063774511030023

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