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Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems

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Abstract

The features of the technology computer aided design of integrated magnetosensitive elements in micro and nanosystems are considered. The results of the simulation and optimization of the constructive and technological parameters for magnetosensitive transistors, integrated Hall elements based on the standard CMOS technology, the Hall field sensor based on SOI-structures, and the characteristics of magnetic field concentrators are presented.

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Authors and Affiliations

  1. National Research University of Electronic Technology, Moscow, 124498, Russia

    A. V. Kozlov, A. Yu. Krasjukov, T. Yu. Krupkina & Yu. A. Chaplygin

Authors
  1. A. V. Kozlov
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  2. A. Yu. Krasjukov
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  3. T. Yu. Krupkina
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  4. Yu. A. Chaplygin
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Corresponding author

Correspondence to T. Yu. Krupkina.

Additional information

Original Russian Text © A.V. Kozlov, A.Yu. Krasjukov, T.Yu. Krupkina, Yu.A. Chaplygin, 2015, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2015, Vol. 20, No. 5, pp. 489–496.

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Kozlov, A.V., Krasjukov, A.Y., Krupkina, T.Y. et al. Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems. Russ Microelectron 45, 522–527 (2016). https://doi.org/10.1134/S1063739716070088

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  • DOI: https://doi.org/10.1134/S1063739716070088

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