Abstract
The magnetotransistor structures (MTS) modeling concept as a special class of semiconductor magnetic field transducers is proposed. The legality is substantiated, and the injection MTS two-dimensional modeling method is offered. Two-dimensional models of MTS structures of vertical and horizontal modifications in accordance with the longitudinal and transverse magnetic axes are considered. The equivalence of the two-dimensional model representation of MTS of different types is shown.
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References
Glauberman MA, Kozel VV, Nakhabin AV (2000) Charge-carrier transport in a double-collector magnetotransistor. Semiconductors 34:603–605. https://doi.org/10.1134/1.1188036
Glauberman MA, Egorov VV, Kanishcheva NA, Kozel VV (2010) Zavisimost effektivnosti preobrazovaniya magnitotranzistora ot vremeni zhizni inzhektirovannykh nositeley (Dependence of the conversion efficiency of the magnetotransistor on the lifetime of the injected carriers), 4th International Scientific and Technical Conference “Sensor Electronics and Microsystem Technologies” SEMST-4. Odessa, June 28–July 2, 2010, Abstracts, Odesa Astroprint: 194
Gordiєnko YuO, Larkin SYu, Lepikh YaI ta in. (2011) Teoretichni aspekti modelyuvannya ta proyektuvannya rezonatornikh zondiv dlya skanuyuchoї mikroskopiї (Theoretical aspects of the modeling and design of resonator probes for scanning microscopy). Sens Electron Microsyst Technol 2(3):97–107
Glauberman M, Egorov, Kulinich O (2012) Magnetotransistors: physics, modeling, application of LAP LAMBERT Academic Publishing GmbH & Co.KG:136
Lepikh YaI, Gordiєnko YuO, Dzyadevich SV ta in (2011) Intelektualni vimiryuvalni sistemi na osnovi mikroyelektronnikh datchikiv novogo pokolinnya (Intelligent visual systems based on microelectronic sensors of the new generation). Monograph Odesa Astroprint: 352
Guvenc MG (1988) Finite-element analysis of magnetotransistor action. IEEE Trans Electron Dev 35(11):1851–1860
Nathan A, Maenaka K, Allegretto W, Baltes H, Nakam T (1989) The Hall effect in integrated magnetotransistors. IEEE Trans Electron Dev 36(1):108–117
Vikulina LF, Glauberman MA (2000) Fizika sensoriv temperaturi i magnitnogo polya (Physics of temperature and magnetic field sensors) Odesa Mayak, 244
Krasyukov AYu, Krupkina TYu, Chaplygin YuA (2015) Modelirovaniye kharakteristik i optimizatsiya konstruktivno-tekhnologicheskikh parametrov integralnykh magnitochuvstvitelnykh elementov v sostave mikro- i nanosistem MIyeT. Izvestiya vysshikh uchebnykh zavedeniy. Elektronika (Modeling of characteristics and optimization of constructive and technological parameters of integral magnetosensitive elements as part of micro- and nanosystems MIET, Izvestiya of higher educational institutions. Electronics 20 (5):489–496
Kozlov AV, Krasjukov AY, Krupkina TY (2016) Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems. Russ Microelectron 45:522–527. https://doi.org/10.1134/S1063739716070088
Rahman M, Hassan A, Imamuddin M (1987) Effect of magnetic field on the electrical paramters of the junction transistors with theoretical explaination. Indian J Pure Appl Phys 25(5 & 6):231–234
Zieren V (1984) Geometrical analysis of the offset in buriedcollector vertical magnetotransistor. Sens Actuators 5(3):199–206
Persiyanov TV, Barabich IN, Parsamyan DK, Tairova DA (1986) Chislennyy dvumernyy analiz raspredeleniya neosnovnykh nositeley zaryada v baze mnogokollektornykh magnitotranzistorov(Numerical two-dimensional analysis of the distribution of minority charge carriers in the base of multi-collector magnetotransistors) In Matematicheskoye modelirovaniye i eksperimentalnyye issledovaniya elektricheskoy relaksatsii v elementakh mikroskhem (Mathematical modeling and experimental research of electrical relaxation in microcircuit elements) Moscow, pp 66–72
Davies LW, Wells MS (1971) Magneto-transistor incorporated in an integrated circuit. In: Proceedings IREE Australia, June, pp 235–238
Baltes GP, Popovich RS (1986) Integralni napivprovidnikovi datchiki magnitnogo polya TIIER (Integral magnetic field sensors TIIER) 74(8):60–90
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Glauberman, M.A., Lepikh, Y.I. (2021). Semiconductor Magnetosensitive Structure Two-Dimensional Model Representation. In: Fesenko, O., Yatsenko, L. (eds) Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their Applications . NANO 2020. Springer Proceedings in Physics, vol 263. Springer, Cham. https://doi.org/10.1007/978-3-030-74741-1_29
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DOI: https://doi.org/10.1007/978-3-030-74741-1_29
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