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Formation of silver and zinc selenide relief patterns by the lift-off photolithography method

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Abstract

Conducting the lift-off photolithography on silicon wafers with thicknesses of the FP-383 photoresist layers varying from 1.60 ± 0.20 to 4.20 ± 0.20 μm is considered. As a lift-off layer, either a silver layer or zinc selenide layer with a thickness of 80–90 nm was deposited. The edge roughness of the image elements after the lift-off is 5.00 ± 0.20 μm.

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Authors and Affiliations

  1. Chemical Faculty, Lobachevsky Nizhny Novgorod State University (NNSU), Nizhny Novgorod, Russia

    D. V. Lysich & S. V. Zelentsov

  2. Alekseev Nizhny Novgorod State Technical University, Nizhny Novgorod, Russia

    D. V. Lysich

  3. Nizhny Novgorod Physical-Technical Institute, Lobachevsky Nizhny Novgorod State University, Nizhny Novgorod, Russia

    V. E. Kotomina & I. N. Antonov

Authors
  1. D. V. Lysich
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  2. S. V. Zelentsov
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  3. V. E. Kotomina
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  4. I. N. Antonov
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Correspondence to D. V. Lysich.

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Original Russian Text © D.V. Lysich, S.V. Zelentsov, V.E. Kotomina, I.N. Antonov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 3, pp. 203–207.

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Lysich, D.V., Zelentsov, S.V., Kotomina, V.E. et al. Formation of silver and zinc selenide relief patterns by the lift-off photolithography method. Russ Microelectron 45, 191–195 (2016). https://doi.org/10.1134/S1063739716030069

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  • DOI: https://doi.org/10.1134/S1063739716030069

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