Abstract
Resistive compositions based on ter-copolymers of isobornylacrylate with methylmethacrylate and (meth)acrylic acid, which are synthesized using the controlled radical polymerization with reversible chain transfer, as well as triphenylsulphoniumtriflate as a photo-sensitive catalyst are studied. The effect of the chain-transfer agent, as well as the composition and molecular weight of the copolymer on the sensitivity of the resists to UV radiation (222 nm), is determined. Using the ter-copolymer of tert-butoxycarbonyloxystyrene with methylmethacrylate and methacrylic acid, the dependence of the lithographic properties of the photoresist on the chemical composition of the photoacid generator is analyzed. The plasma-chemical stability of (co)polymer resists of methacrylic series in the plasma of Ar + SF6 is studied.
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Original Russian Text © S.A. Bulgakova, D.A. Gurova, S.D. Zaitsev, E.E. Kulikov, E.V. Skorokhodov, M.N. Toropov, A.E. Pestov, N.I. Chkhalo, N.N. Salashchenko, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 6, pp. 419–428.
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Bulgakova, S.A., Gurova, D.A., Zaitsev, S.D. et al. Effect of polymer matrix and photoacid generator on the lithographic properties of chemically amplified photoresist. Russ Microelectron 43, 392–400 (2014). https://doi.org/10.1134/S1063739714050023
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DOI: https://doi.org/10.1134/S1063739714050023