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Probe studies of plasma characteristics in the ICP reactor

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Abstract

The ICP plasma chemical reactor is studied by using the probe plasma diagnostic methods. The plasma density in the wafer region was evaluated at different parameters of the process. The automatic bias potential on the surface of glass wafers of different thickness and uniformity of the ion current density distribution over the plate diameter are measured. The deep silicon etching mode with a high uniformity over the whole plate is determined.

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Authors and Affiliations

  1. National Research University MIET, Moscow, Russia

    A. I. Vinogradov, N. M. Zaryankin & S. P. Timoshenkov

Authors
  1. A. I. Vinogradov
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  2. N. M. Zaryankin
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  3. S. P. Timoshenkov
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Correspondence to A. I. Vinogradov.

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Original Russian Text © A.I. Vinogradov, N.M. Zaryankin, S.P. Timoshenkov, 2012, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2012, No. 1, pp. 54–58.

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Vinogradov, A.I., Zaryankin, N.M. & Timoshenkov, S.P. Probe studies of plasma characteristics in the ICP reactor. Russ Microelectron 42, 433–437 (2013). https://doi.org/10.1134/S1063739712070116

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  • DOI: https://doi.org/10.1134/S1063739712070116

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