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Advantages of the use of supertip Xe+ sources with field gas ionization in ion microscopes

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Abstract

Advantages of the use of beams of focused Xe+ ions obtained from supertip sources with field ionization (GFIS*) in ion microscopy compared with conventional sources of different ions are considered. Specifically, the higher working temperature of supertip Xe+ sources with field gas ionization as well as the higher values of the interaction sections of the Xe+ ions with different solid targets are a considerable technical advantage. The properties of focused Xe+ ion beams with a special accent on optimization of ion-optical systems of microscopes are evaluated. The possibilities of nanomodification and elemental analysis of materials with the use of beams of Xe+ ions are considered.

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Authors and Affiliations

  1. St. Petersburg Institute of Information Science and Automation, Russian Academy of Sciences, St. Petersburg, Russia

    V. A. Zhukov

  2. Ion Beam Technology, Heidelberg, Germany

    S. Kalbitzer

Authors
  1. V. A. Zhukov
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  2. S. Kalbitzer
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Correspondence to V. A. Zhukov.

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Original Russian Text © V.A. Zhukov, S. Kalbitzer, 2011, published in Mikroelektronika, 2011, Vol. 40, No. 1, pp. 21–29

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Zhukov, V.A., Kalbitzer, S. Advantages of the use of supertip Xe+ sources with field gas ionization in ion microscopes. Russ Microelectron 40, 17–24 (2011). https://doi.org/10.1134/S1063739711010082

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